| 摘要 |
PURPOSE: To provide a method of forming semiconductor quantum fine line structure whereby a T-type quantum well structure can be easily formed. CONSTITUTION: On a main face 10a of a first semiconductor substrate a first quantum well structure 12 is formed by the MBE method to form a first laminate 18 with a first well layer 16 having an exposed main face 16 at the surface. On a main face 20a of a second semiconductor substrate 20 a second well structure 22 is formed by the MBE method to form a second laminate 28. This laminate 28 is cleaved to form end faces (cleavage planes) where the sections of second well layers 26a and 26b are exposed. The end face of the laminate 28 is directly bonded to the main face 16a of the well layer 16. |
