| 摘要 |
PURPOSE: A capacitor formation method of semiconductor devices is provided to simplify the manufacturing processes by forming a storage node formation hole using a self-aligned contact processing. CONSTITUTION: After forming a gate electrode(13) on a silicon substrate(11), a first interlayer dielectric(17) is formed on the gate electrode. After forming a first planarized layer(19) on the resultant structure, a bit line(21) is formed on the first planarized layer. A second interlayer dielectric(25) and a second planarized layer(27) are sequentially formed on the bit line. A storage node formation hole is formed by sequentially etching the second planarized layer, the second interlayer dielectric, a first planarized layer and the first interlayer dielectric using a single self-aligned contact processing. Then, a storage node formation conductive layer is formed on the entire surface of the resultant structure.
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