SEMICONDUCTOR CHIP INCLUDING BIPOLAR TRANSISTOR

摘要

PURPOSE: A semiconductor chip including a bipolar transistor is provided to prevent the generation of a crack and a damage of a surface of a substrate by contacting a poly-emitter with a multi-emitter region. CONSTITUTION: A plurality of emitter region(140) is formed within a base region(132) of a silicon substrate(130). An insulating layer including a buffer oxide layer(134) and a nitride layer(136) is formed on the substrate(130) in order to expose a predetermined portion of a surface of the emitter region(140). A poly-emitter(138) is formed on the insulating layer. A UDO(142) is formed on the insulating layer in order to expose a predetermined portion of a surface of the poly-emitter(138). A metal pad(144) is formed on the UDO(142). A protective layer(146) is formed on the whole structure. The metal pad(144) is contacted directly with the poly-emitter(138).