| 摘要 |
PURPOSE: A memory structure capable of locating a failure of wafer using a dummy pattern and a method of manufacturing the memory structure are provided to reduce the manufacturing time by locating the failure quickly. CONSTITUTION: The memory structure includes a cell region and a peripheral region, a decoder region and a dummy pattern(31,32). The cell region includes a plurality of memory cells, a decoder and a sense amplifier. The peripheral region is provided in the area except for the cell region. The decoder region has a low pattern density. The dummy pattern locates the internal position of the memory device in the peripheral region. The dummy pattern has the size between 1 micrometer through 100 micrometer. The dummy pattern further denotes the internal position of the memory device by using alphabets, numerals or variable shape letters.
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