发明名称 ELECTROSTATIC CHUCK PARTICLE REDUCING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PURPOSE: To reduce particles generated in association with temperature rise of a wafer after the wafer has been mounted on the chucking surface of an electrostatic chuck. CONSTITUTION: A wafer is placed on the chucking surface of an electrostatic chuck, a wafer having a temperature TO which is lower than the temperature of the chucking surface, is chucked to the surface by applying voltage to the electrostatic chuck. When wafer temperature is raised to the saturation temperature, the stress which resulted from the difference between the thermal expansion coefficient of wafer and the thermal expansion coefficient of the electrostatic chuck has an open stage obtained by slidingly moving the wafer on the surface.
申请公布号 KR20010070935(A) 申请公布日期 2001.07.27
申请号 KR20010035649 申请日期 2001.06.22
申请人 NGK INSULATORS, LTD. 发明人 NAKAO MIE;ONO MASASHI;USHIKO SHIRYUSUKE
分类号 B23Q3/15;G03F7/20;H01L21/027;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H01L21/68 主分类号 B23Q3/15
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