| 摘要 |
PROBLEM TO BE SOLVED: To improve the sensitivity and dynamic range of the semiconductor image sensor of active pixels. SOLUTION: The image sensor having an array of X-Y addressable pixels includes in each pixel an optical detector 22 which is so constituted as to sense the band width of 1st light, a floating diffusion part 28 which is so constituted as to sense the band width of 2nd light, a reset transistor which can reset the optical detector 2 and floating diffusion part 28 to specific potentials respectively, and a transfer gate 26 which transfers electric charges from the optical detector 22 to the floating diffusion part 28. The floating diffusion part 28 has no light shield part and functions as a 2nd optical detector. After photoelectrons generated by the floating diffusion part 28 are read out as a voltage signal, photoelectrons generated by the optical detector 22 are transferred to the floating diffusion part 28 and read out as voltage signals, of which a signal is composed. |
