| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a GaN compound semiconductor excellent in light-emission intensity. SOLUTION: An N-type GaN layer 12 is formed on a sapphire substrate 10, over which an N-type superlattice layer 14 and a P-type superlattice layer 16 are formed. The supperlattice layer comprises AlGaN and GaN laminated alternately. At the growth step of AlGaN or that of GaN, In and Si are doped to raise light-emission intensity. Indium is doped at the growth step of AlGaN while In and Si are doped at the growth step of GaN, to significantly raise the light-emission intensity.</p> |
