| 摘要 |
PROBLEM TO BE SOLVED: To obtain a tape carrier for semiconductor devices in gold-plated configuration with improved gold wire-bonding properties and solder ball bonding properties. SOLUTION: A tape carrier 1 where a nickel-plated layer 6 is formed is wound around the peripheral surface of a roll 3 that is provided in a gold-plated treatment bath 2 for rotating back, thus reducing plating time at the surface side of a via hole 11 as compared with that at the surface side of a conductor pattern layer 5, and setting gold plating thickness at the conductor pattern surface side and at the via hole surface side to 0.5μm or larger and less than 0.5μm, respectively.
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