| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device such as semiconductor integrated circuits, etc., and a memory device. SOLUTION: The semiconductor device is composed of a semiconductor having source regions, drain regions and channel forming regions and a gate part on the semiconductor. The source regions overlie the gate part, the source regions and the drain regions expand from the surface of the semiconductor at a depth less than the thickness of the semiconductor, the drain regions are shallower than the source regions at a range of 0.1μm or less, the ends of the drain regions align with the ends of the gate part, and the channel forming regions adjoin the gate part between the source regions and drain regions and have a length of 1μm or less.
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