IMPURITY DOPING METHOD AND FABRICATION METHOD FOR MEMORY DEVICE, INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an impurity doping method and a fabrication method for memory device, insulated gate type semiconductor device and semiconductor device in a process for fabricating a semiconductor device such as semiconductor integrated circuit. SOLUTION: One impurity area is formed by introducing ions by implanting ions into a semiconductor adjacent to a gate part formed on the semiconductor with the gate part and a mask member as a mask. Next, after the mask member is removed, the other impurity area shallower than one impurity area is formed by introducing ions having one conductive type by implanting ions into an area opposite to the area and adjacent to the gate part. Concerning such an impurity dope method, one impurity area does not contact the other impurity area.