| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a solar cell in which the output characteristics and radiation resistance are enhanced without using a thin film cell. SOLUTION: This solar cell has a P-N junction on the light receiving face side of a semiconductor substrate 10 and a passivation film 18 on the rear surface thereof wherein a P type impurity diffusion layer 11 and a P electrode 12 connected therewith, and an N type impurity diffusion layer 13 and an N electrode 14 connected therewith are provided on the surface of the light receiving face.</p> |
