| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing machine for machining wafer surface with a high-frequency electric power wherein the efficiency of the high-frequency electric power is raised with a simple configuration. SOLUTION: There are provided a metal chamber 1 comprising an upper lid 1a, side wall and bottom wall, a wafer placement stage 2 which is provided in the chamber 1 for vertical movement and connected in air-tight to a bottom wall 1c of the chamber 1 through a metal bellows 24, a lower part electrode 13 so provided as to be insulated from the wafer placement stage 2, an RF guiding body 17 where an upper end is connected to the lower part electrode 13 while a lower end is connected to a high-frequency wave oscillator 18, and a conductor cylinder 22 where upper end is connected to the wafer placement stage 2 while insulated from the RF guiding body 17. Here, the conductor cylinder 22 is substantially made conductive with the upper lid 1a so that a specified plasma is generated between the lower part electrode 13 and the upper lid 1a which acts as an upper part electrode. A conductive means is provided which establishes conduction between the side wall of chamber 1 and the upper end of the conductor cylinder 22 by a substantially shortest route.
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