| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity in thickness and efficiency in charge transfer of an ITO gate in a CCD image sensor. SOLUTION: A gate dielectric layer 110a is formed on a substrate, and gate electrode layers 105a and 106a as a plurality of phases are formed on the surface thereof. Silicon is deposited on the surface of a CCD, and a region other than a first electrode group is covered with a mask. Etching is carried out, and a deposited silicon layer remains in the region covered with the mask, and each sidewall on both sides of the remaining deposited silicon is oxidized. An electrode layer is so formed that the CCD is covered by the electrode layer to form a series of first electrodes. By using CMP, the still remaining silicon layer and the electrode layer are removed in a way that the sidwall still remains. Then, these steps are repeated by forming another electrode and carrying out the CMP treatment, and two adjoining U-shaped electrodes are formed.
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