| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device wherein the mask process for forming a source layer and a high-concentration base layer of vertical field effect transistor is reduced to realize simplification of the manufacturing process. SOLUTION: The manufacturing method comprises steps of forming recessed trenches 5 into the surface of a one conductivity type semiconductor substrate 1, forming a gate oxide film 6 on the inner surfaces of the trenches, burying a conductive material in the trenches 5 to form trench type gate electrodes 7, introducing the opposite conductivity type impurity on the semiconductor substrate 1 surface to form a reveres conductivity type bass layer 8, introducing the one conductivity type impurity on the opposite conductivity type base layer 8 surface to form the one conductivity type source layer 9, and selectively introducing the opposite conductivity type impurity at a higher concentration than the impurity concentration of the source layer 9 into the one conductivity type source layer 9 to from a high concentration opposite conductivity type base layer 11 using a mask. The high concentration opposite conductivity type base layer 11 is fromed by reversing a part of the one conductivity type source layer 9 and hence a mask is not needed for forming the source layer 9.
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