摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, where manufacturing cost is restrained by restraining increase of kinds of exposure masks for injection and preventing complicated manufacturing processes, and to provide a manufacturing process of the device. SOLUTION: An impurity injection region R81 is formed by first injection, using an exposure mask for injection which has an aperture at a position near the right side under part, and an impurity injection region R82 is formed by a second injection turning up the exposure mask. Thereby three kinds of impurity injection regions, i.e., the impurity injection region R81 formed by the first injection, the impurity injection region R82 formed by the second injection and an impurity injection region R83 formed by the first and second injections are formed. By adding a region R84 in which impurities are not injected, four kinds of regions can be formed by using one kind of exposure mask. These regions can be also formed by rotating the mask. |