发明名称 DIAMOND WIRING SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a technique for realizing multiplayer wiring in diamond having highest heat conductivity among the materials. SOLUTION: A diamond wiring substrate 10 has a diamond substrate 1 and implantation layers 2, 3, 4, where a metallic element exists in the thickness of 10 nm or larger and concentration of 1020 cm-3 or higher in the diamond substrate 1. The implantation layers 2, 3, 4 are formed through ion implantation with high energy of a metallic element of 1 MeV or higher and with a high dose of 1016 cm-2 or higher.
申请公布号 JP2001203429(A) 申请公布日期 2001.07.27
申请号 JP20000010708 申请日期 2000.01.19
申请人 JAPAN FINE CERAMICS CENTER;SUMITOMO ELECTRIC IND LTD 发明人 NISHIBAYASHI YOSHIKI;MATSUURA TAKASHI;IMAI TAKAHIRO
分类号 H05K1/03;H01L21/48;H01L23/373;H01L23/498;H05K3/10;H05K3/14;(IPC1-7):H05K1/03 主分类号 H05K1/03
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