发明名称 |
DIAMOND WIRING SUBSTRATE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique for realizing multiplayer wiring in diamond having highest heat conductivity among the materials. SOLUTION: A diamond wiring substrate 10 has a diamond substrate 1 and implantation layers 2, 3, 4, where a metallic element exists in the thickness of 10 nm or larger and concentration of 1020 cm-3 or higher in the diamond substrate 1. The implantation layers 2, 3, 4 are formed through ion implantation with high energy of a metallic element of 1 MeV or higher and with a high dose of 1016 cm-2 or higher. |
申请公布号 |
JP2001203429(A) |
申请公布日期 |
2001.07.27 |
申请号 |
JP20000010708 |
申请日期 |
2000.01.19 |
申请人 |
JAPAN FINE CERAMICS CENTER;SUMITOMO ELECTRIC IND LTD |
发明人 |
NISHIBAYASHI YOSHIKI;MATSUURA TAKASHI;IMAI TAKAHIRO |
分类号 |
H05K1/03;H01L21/48;H01L23/373;H01L23/498;H05K3/10;H05K3/14;(IPC1-7):H05K1/03 |
主分类号 |
H05K1/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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