METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal line formation method of semiconductor devices is provided to reduce a contact resistance and to improve an electromigration by forming a metal alloy having a high conductivity on a barrier metal film. CONSTITUTION: After forming an interlayer dielectric(2) on a silicon substrate(1), a contact hole is formed by selectively etching the interlayer dielectric(2). A barrier metal film(3) is formed on the resultant structure by depositing Ti/TiN. Then, a first metal film is formed by depositing a titanium(Ti) on the resultant structure, and a second metal film(6) is formed by depositing Al-Si-Cu alloy at the high temperature. Thereby, Al-Ti-Si alloy(9) having a high conductivity is formed between the barrier metal film(3) and the second metal film(6).