| 摘要 |
<p>A voltage level shifter circuit with gate oxide protection that can provide level shifted voltages for both read and write operations for applications in memory circuits, without increasing the circuit complexity. The level shifter circuit includes a voltage level shifter and an output stage which drives a load. The level shifter circuit can be used to drive voltages greater than the gate oxide voltage limit (i.e., level shift up for memory write operations), to drive level less than or equal to a digital supply level (i.e., level shift down or no level shift for standard memory read operations), and to drive voltages greater than digital supply level but less than the gate oxide voltage limit (i.e., fast level shift up for 'booted read' operations in a memory when the digital supply voltage is too low for standard read access).</p> |
