Production of a capacitor comprises forming an intermediate insulating layer on a semiconductor substrate, forming a lower electrode, depositing a thin layer, heating and/or calcining or tempering and forming an upper electrode

摘要

Capacitor comprises: forming an intermediate insulating layer on a semiconductor substrate; forming a lower electrode on the intermediate insulating layer; depositing a thin layer of amorphous TaON on the lower electrode; heating and/or calcining or tempering the thin layer under reduced pressure to form a dielectric layer made of crystalline TaON; and forming an upper electrode on the dielectric layer. Preferred Features: The lower electrode is made of doped polycrystalline silicon or a material consisting of TiN, TaN, W, WSi, Ru, RuO2, Ir, IrO2 or Pt. The process further comprises cleaning the lower electrode using HF vapor after the formation of the lower electrode and before depositing the TAON layer, and nitriding the surface of the lower electrode using an in-situ plasma.