发明名称 |
Layered dielectric on silicon carbide semiconductor structures |
摘要 |
A dielectric structure is disclosed for silicon carbide-based semiconductor devices. In gated devices, the structure includes a layer of silicon carbide, a layer of silicon dioxide on the silicon carbide layer, a layer of another insulating material on the silicon dioxide layer, with the insulating material having a dielectric constant higher than the dielectric constant of silicon dioxide, and a gate contact to the insulating material. In other devices the dielectric structure forms an enhanced passivation layer or field insulator.
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申请公布号 |
US2001009788(A1) |
申请公布日期 |
2001.07.26 |
申请号 |
US20010781732 |
申请日期 |
2001.02.12 |
申请人 |
LIPKIN LORI A.;PAIMOUR JOHN WILLIAMS |
发明人 |
LIPKIN LORI A.;PAIMOUR JOHN WILLIAMS |
分类号 |
H01L29/749;H01L21/02;H01L21/04;H01L21/28;H01L21/314;H01L21/329;H01L21/336;H01L21/338;H01L21/822;H01L27/04;H01L29/06;H01L29/12;H01L29/161;H01L29/24;H01L29/40;H01L29/51;H01L29/739;H01L29/78;H01L29/812;H01L29/861;H01L29/94;(IPC1-7):H01L31/031 |
主分类号 |
H01L29/749 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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