| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of a useless through current by improving protecting capability of a dielectric breakdown protecting circuit. SOLUTION: This device is characterized in that the device is provided with a dielectric breakdown protecting circuit consisting of a first N channel MOS transistor 4 of which a gate electrode is connected to ground voltage Vss and a drain electrode is connected to power source voltage Vcc between a pad 1 and an internal circuit 3, and a second N channel MOS transistor 5 of which a drain electrode is connected to a source electrode of the first N channel MOS transistor 4, a gate electrode as well as a source electrode is connected to a signal line 31 connecting the pad 1 and the internal circuit 3.
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