Sparse-carrier devices and method of fabrication

摘要

A sparse-carrier device including a crystal structure (10) formed of a first material and having a crystallographic facet (26) with a width (w) and a length and quantum dots (30) formed of a second material and positioned in at least one row on the crystallographic facet (26). The at least one row of quantum dots (30) extends along the length of the crystallographic facet (26) and is at least one quantum dot (30) wide (w) and a plurality of quantum dots long. The number of quantum dot rows determined by the width (w) of the crystallographic facet (26). The row of quantum dots (30) form a building block for circuits based on sparse or single electron devices.