Production of a capacitor used in the production of semiconductor devices comprises using a multiple step process to form a dielectric layer and thin layers of amorphous tantalum oxynitride

摘要

A multiple step process to form a dielectric layer and thin layers of amorphous tantalum oxynitride is used in the production of a capacitor for semiconductor devices, especially semiconductor memories. Production of a capacitor comprises: forming a lower electrode on a semiconductor substrate; forming a dielectric layer on the lower electrode forming a first thin layer of amorphous TaON; heating and/or calcining or tempering the first thin layer; forming a second thin layer of amorphous TaON on the lower electrode; heating and/or calcining or tempering the second thin layer to form a multiple layer dielectric layer of TaON; and forming an upper electrode over the dielectric layer. Preferred Features: The lower electrode is made of doped polycrystalline silicon and TiN, Ti, TaN, W, WN, WSi, Ru, RuO2, Ir or Pt.