| 摘要 |
In an over current protection circuit of a semiconductor switching device, a change in a main current of a semiconductor switching device with respect to a change in the detected voltage of the resistor for current detection connected to the current detection terminal of the semiconductor switching device becomes gentle in the vicinity of a location where the semiconductor switching device is turned off. With the provision of the current protection circuit, the variation in the cut-off level of the over current with respect to the variation in the detected voltage of the resistor for current detection connected to the current detection terminal of the semiconductor switching device is suppressed so that the semiconductor switching device can be protected from being breakdown due to the over current flow.
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