| 摘要 |
According to the present invention, a contact hole is formed by using a contact formation mask until portions of a first and a second impurity areas are respectively exposed, so that contact holes are formed. The size of the contact hole formed over the first impurity area (P-type impurity) is relatively larger than that of the contact hole formed over the second impurity area (N-type impurity). As a result, the size of the contact hole formed over an N-type impurity area decreases and that of the contact hole formed over a P-type impurity area increase to a corresponding degree, thereby reducing contact resistance generated on the P-type impurity area without increasing a chip size.
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