发明名称 |
Simplified high Q inductor substrate |
摘要 |
The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprising forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.
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申请公布号 |
US2001009795(A1) |
申请公布日期 |
2001.07.26 |
申请号 |
US20010800049 |
申请日期 |
2001.03.05 |
申请人 |
CHU JEROME TSU-RONG;LABARRE JOHN D.;LIN WEN;MILLER BLAIR |
发明人 |
CHU JEROME TSU-RONG;LABARRE JOHN D.;LIN WEN;MILLER BLAIR |
分类号 |
H01L21/822;H01L21/02;H01L21/77;H01L23/522;H01L23/64;H01L27/04;H01L27/08;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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