发明名称 |
Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
摘要 |
An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.
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申请公布号 |
US2001009139(A1) |
申请公布日期 |
2001.07.26 |
申请号 |
US20010797212 |
申请日期 |
2001.03.01 |
申请人 |
SHAN HONGQING;BJORKMAN CLAES;LUSCHER PAUL;METT RICHARD;WELCH MICHAEL |
发明人 |
SHAN HONGQING;BJORKMAN CLAES;LUSCHER PAUL;METT RICHARD;WELCH MICHAEL |
分类号 |
H01J37/32;(IPC1-7):H01L21/306 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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