| 摘要 |
A distributed feedback ridge waveguide semiconductor laser diode (10) having a waveguide region (22) with a typical thickness of at least 500 nanometers an d an effective refractive index difference between the ridge structure (31) an d exposed portions of the waveguide region (25) which surround the ridge structure of less than 0.001. This permits the width (W) of the ridge (31) t o be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 .mu.m wavelengths, where carrier diffusion and carrier heati ng limit current density injected into the active region (24).
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