METHOD OF MANUFACTURING SILICON SUBSTRATE

摘要

PURPOSE: A method of manufacturing a silicon substrate is provided to form an oxide film thinner than the difference in level by high-pressure thermal oxidation on a silicon substrate. CONSTITUTION: The silicon substrate for an optical device is one which is small in warp besides being excellent in electric property, and is roughly constant in concentration of oxygen even in thickness direction and in which the interface between an oxide film and the silicon can be recognized clearly, and this is suitable as a substrate or the like for the optical waveguide path device an optical integrated circuit. According to the manufacture of this silicon substrate, the terrace structure of such a silicon substrate can be manufactured industrially advantageously in a short time in a simple process by suppressing the occurrence of a warp or microcracks.