| 摘要 |
PURPOSE: A MOS(Metal Oxide Semiconductor) image sensor is provided to realize both low voltage operation of a CMOS(Complementary Metal Oxide Semiconductor) circuit and application of high voltage in initialization. CONSTITUTION: A MOS image sensor element has a unit pixel(101) which including a photosensitive diode(111) and a MOS transistor(112) for detecting optical signals. The MOS image sensor element also has a high concentration embedded layer for accumulating a carrier produced by the MOS transistor when the photosensitive diode is irradiated with light. A MOS image sensor comprises the MOS image sensor element, a vertical scanning signal drive/scan circuit outputting a scanning signal to a gate electrode, and a step-up scanning circuit outputting step-up voltage higher than supply voltage to a source region. The step-up voltage is applied to the source region from the step-up scanning circuit. The carrier accumulated in the high concentration embedded layer is discharged from the embedded layer by the gate voltage raised by the step-up voltage.
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