发明名称 COMPOSITION AND METHOD FOR FORMING FILM, AND INSULATING FILM
摘要 <p>PURPOSE: Provided are polyorganosiloxane based composition for forming film, which can form a film having low specific dielectric constant and high elasticity, and which is suitable as material for forming an interlayer insulating film. CONSTITUTION: The composition comprises (A) hydrolyzed condensate, obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of a compound of formula(1): RaSi(OR1)4-a, a compound of formula(2): Si(OR2)4, and a compound of formula(3): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c, in the presence of alkali catalyst; and (B) hydrolyzed condensate, obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of a compound of formula(1), a compound of formula(2), and a compound of formula(3), in the presence of metal chelate. In the formulas, R represents hydrogen atom, fluorine atom or monovalent organic group, R1 and R2 represent a monovalent organic group, R3 to R5 are same or different and a monovalent organic group respectively, R7 represents hydrogen atom, phenylene group or a group represented by -(CH2)n(wherein, n represents an integer of 1-6), a represents an integer of 1 to 2, b and c are same or different and an integer of 0-2, respectively, and d represents 0 or 1.</p>
申请公布号 KR20010070110(A) 申请公布日期 2001.07.25
申请号 KR20000056974 申请日期 2000.09.28
申请人 JSR CORPORATION 发明人 HAYASHI EIJI;KUROSAWA TAKAHIKO;SEO, YOUNG SOON;SHIODA ATSUSHI;YAMADA KINJI
分类号 C08L83/04;C09D183/04;C09D183/14;H01L21/312;(IPC1-7):C08L83/04 主分类号 C08L83/04
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