发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: To reduce the consumption power of a semiconductor device by giving only first potential to a first source line in the case of a source operation request and giving second potential that is lower than the first potential to the first source line, and giving the first potential to the first source line after write data has been given to a pair of bit lines. CONSTITUTION: In response to a write operation request, signals LDVDDi and /LVDDi for reducing potential become high and low levels, respectively, and a lower power supply potential VDD2 than power supply potential VDD1 is given to a sense power supply line 141nb that has been charged to the supply voltage VDD1. After that, when write data is given to a pair of bit lines 141a, the signals LVDDi and/LVDD1 for reducing potential become low and high levels, respectively, before a selected word line 141 d is reset, thus giving the supply voltage VDD1 to the sense power supply line 141nb.
申请公布号 KR20010070067(A) 申请公布日期 2001.07.25
申请号 KR20000053762 申请日期 2000.09.09
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ARIMOTO KAZUTAMI
分类号 G11C11/409;G11C7/06;G11C7/18;G11C11/407;G11C11/4091;H01L21/8242;H01L27/108;(IPC1-7):G11C5/14 主分类号 G11C11/409
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