METHOD FOR GROWING ZY-CRYSTAL

摘要

PURPOSE: Disclosed is a method for growing zy-crystal to remove fine defect that exists in seed crystal surface and growth region by fixing proper temperature range, pressure range, condition of additive to deposit Si element in the mixed aqueous solution without forming unnecessary compound, to grow single crystal of identical quality for short time. CONSTITUTION: The method for growing zy-crystal is characterized by placing natural fertilization material in the lower end part of autoclave; locating plate seed crystal of revolution angle 00'00"(0001) from z axis to y axis on the basis of x axis in the upper end part(crystal growing part) after placing convection control plate(baffle); sealing the autoclave after filling by inputting solution for hydrothermal method containing sodium hydroxide into the autoclave; dropping temperature of the upper end part and raising temperature of the lower end part; depositing Si element with convective phenomenon as maintaining for constant term by controlling pressure. The solution for hydrothermal method contains LiOH and NaNO2. The temperature of the upper end part is maintained with 350deg.C or higher and internal pressure of the autoclave is maintained with 1800bar or higher.