| 发明名称 |
Method of manufacturing a wafer holder for semiconductor manufacturing apparatus |
| 摘要 |
<p>A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece (10a), paste containing metal particles is applied and fired to form a heater circuit pattern (11) as a conductive layer. Between the surface of the sintered aluminum nitride piece (10a) having the heater circuit pattern (11) formed thereon and another sintered aluminum nitride piece (10b), a glass layer (14) is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces (10a and 10b) together. <IMAGE> <IMAGE></p> |
| 申请公布号 |
EP1119041(A2) |
申请公布日期 |
2001.07.25 |
| 申请号 |
EP20010300422 |
申请日期 |
2001.01.18 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KUIBIRA, AKIRA;NAKATA, HIROHIKO;HIGAKI, KENJIRO;NATSUHARA, MASUHIRO;ISHII, TAKASHI;MATSUI, YASUYUKI |
| 分类号 |
C04B37/00;C04B41/52;C04B41/89;H01L21/00;H01L21/205;H01L21/3065;H01L21/31;H01L21/48;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 |
主分类号 |
C04B37/00 |
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