发明名称 |
ELECTROSTATIC INDUCTION TRANSISTOR |
摘要 |
<p>In a static induction transistor, in addition to a first gate layer (4), a plurality of second gate layers (41) having a shallower depth and a narrower gap therebetween than those of the first gate layer (4) are provided in an area surrounded by the first gate layer (4), thereby an SiC static induction transistor with an excellent off characteristic is realized, while ensuring a required processing accuracy during production thereof. <IMAGE></p> |
申请公布号 |
EP1119054(A1) |
申请公布日期 |
2001.07.25 |
申请号 |
EP19990944857 |
申请日期 |
1999.09.28 |
申请人 |
HITACHI, LTD. |
发明人 |
YATSUO, TSUTOMU;OHNO, TOSHIYUKI;ONOSE, HIDEKATSU;OIKAWA, SABURO |
分类号 |
H01L29/80;H01L29/808;H01L29/10;H01L29/24;H01L29/772;(IPC1-7):H01L29/80 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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