CONFORMAL THIN FILM ON CAPACITOR ELECTRODE SUBJECTED TO TEXTURE WORKING

摘要

PURPOSE: To provide a method for forming a capacitor on an integrated circuit. CONSTITUTION: This method includes the construction of a bottom electrode containing a silicon layer subjected to texture working and the deposition of a dielectric layer on the silicon layer subjected to texture working, wherein the deposition includes the formation of a single layer on the texture-worked silicon layer by about 1 of the first material or less by the exposure to the first reactant seed and the leaving of a single layer of about 1 of the second material or less by the reaction of the second reactant seed with the first material.