发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 PURPOSE: To avoid making algorithm complex in normal write-in operation and write-in operation before erasion. CONSTITUTION: This device is constituted so that a test bit is generated using a test bit generation matrix in which the number of elements of '1' of each row are the number of pieces required for generating a test bit and an odd number, in normal write-in operation and write-in operation before erasion.
申请公布号 KR20010070291(A) 申请公布日期 2001.07.25
申请号 KR20000074918 申请日期 2000.12.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KASAI DAKAMICHI;KASAI NOZOMI
分类号 G11C16/06;G11C16/16;G11C29/00;G11C29/42;(IPC1-7):G11C16/16 主分类号 G11C16/06
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