| 摘要 |
PURPOSE: Disclosed is a semiconductor memory in which data for relieving a defective cell can be obtained without performing facility investment for a memory tester. CONSTITUTION: In a semiconductor memory provided with a redundant circuit replacing the defective cell existing on a memory cell array by a redundant cell and relieving the defect, data(DQ0-DQ15) of plural bits externally given are written into a memory cell in a memory cell array(30) by a write circuit(40), and read out from the memory cell array(30) by a read circuit(50). At this time, data are compressed by a data compression circuit(54) making bits of the prescribed number simultaneously being made an object of replacement by the redundant circuit as a unit and are outputted to the memory tester(200).
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