| 摘要 |
PURPOSE: A non-volatile semiconductor memory is provided to be capable of storing the initial setting data easily in verification and correction with a simple configuration. CONSTITUTION: This memory has a memory cell array(1) in which non-volatile memory cells are arranged to be electrically rewritable, decoding circuits(4,7) for selecting a memory cell of the memory cell array(1), a sense amplifier circuit(5) for detecting and amplifying data of the memory cell array(1), and a control circuit(11) for controlling the write-in and erasion operation of the data of the memory cell array(1). An initial setting data area(3) in which initial setting data is written is set in the memory cell array(1). The memory is provided with initial setting data latch circuits(13,15) for transferring and holding initial setting data read out from the initial setting data region(3). The control circuit(11) controls initial setting operation for reading out initial setting data of the memory cell array(1) and transferring and holding it to the initial setting data latch circuits(13,15).
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