PLASMA PROCESSING METHOD

摘要

A gas supply part (51) is provided in a vacuum vessel (2) so as to surround a region facing a wafer (10) so that a process gas is jetted out from the gas supply part (51) toward the wafer (10). Plasma producing microwaves are turned on and off at a frequency of 30 Hz to 500 Hz to be intermittently supplied from a radio-frequency power generating part (6) into the vacuum vessel (2). Thus, the gas remaining on the wafer (10) is replaced with a new process gas while the microwaves are turned on. Thus, the difference in degree of dissociation between the central portion and peripheral portion of the wafer (10) is not so great to uniformly carry out a plasma process. <IMAGE>