发明名称 Substrate processing chambers and methods of operation thereof
摘要 The disclosure relates to a reactor or processing chamber (100) comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage (185) having a surface area to support a substrate such as a wafer and a body including at least one heating element (180), a shaft (190) coupled to the body, a plurality of temperature sensors (125) coupled to the chamber, each configured to measure a temperature at separate points associated with the surface area of the stage, and a motor (320) coupled to the shaft and configured to rotate the resistive heater about an axis through the shaft. In this manner, the temperature sensors may measure a temperature at separate points of the surface area of the stage. A method of rotating a shaft and measuring a plurality of temperatures over the surface area of the stage or over a wafer seated on the stage with the plurality of temperature sensors.
申请公布号 EP1119024(A2) 申请公布日期 2001.07.25
申请号 EP20010300409 申请日期 2001.01.18
申请人 APPLIED MATERIALS, INC. 发明人 HO, HENRY;RUBINCHIK, ALEXANDER;CHEN, AIHUA (STEVEN);CABREROS, ABRIL;LI, TIANXIAO (STEVEN);YAM, MARK;PEUSE, BRUCE W.
分类号 C23C16/44;C23C16/52;H01L21/00;H01L21/205;H01L21/31;(IPC1-7):H01L21/00 主分类号 C23C16/44
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