| 发明名称 |
MANUFACTURING METHOD OF DIAMOND FILM FOR LITHOGRAPHY |
| 摘要 |
<p>PURPOSE: A manufacturing method of a diamond film for a lithography is provided to form a diamond film having high crystallization and desired film stress on a substrate without damaging smoothness and film stress, after the film is formed. CONSTITUTION: A diamond film is formed on a silicon substrate(21), having an underlying film(22) formed thereon or an underlying substrate(22) by using a raw material gas of a mixed gas including methane gas, hydrogen gas, and oxygen gas, and then the substrate(21) is etched away to manufacture a diamond film(23) for lithography.</p> |
| 申请公布号 |
KR20010070195(A) |
申请公布日期 |
2001.07.25 |
| 申请号 |
KR20000066061 |
申请日期 |
2000.11.08 |
| 申请人 |
NTT ADVANCED TECHNOLOGY CORPORATION;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KUBOTA YOSHIHIRO;NOGUCHI HITOSHI;OKADA IKUO |
| 分类号 |
H01L21/20;C23C16/01;C23C16/02;C23C16/27;G03F1/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
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