| 摘要 |
PURPOSE: To solve a problem that a void V is formed inside an electrode or a wiring of polyside structure in a formation stage in which the electrode and the wiring are formed, and with a reduction in size and resistance of an electrode and a wiring, the adverse effect of the void V gets actualized to deteriorate the manufacture of the electrode and wiring in yield. CONSTITUTION: A tungsten silicide film is formed through such a manner that when a tungsten silicide layer is formed on a polysilicon layer, phosphorus atom-containing gas is added to reactive gas in an initial stage in which the tungsten silicide layer is formed, and the amount of phosphorus atom-containing gas added to the reactive gas is set at 0.2 to 0.45 vol.%.
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