| 摘要 |
PURPOSE: A fabrication method of dual gate GaAs MESFETs is provided to easily control a distance between dual gates. CONSTITUTION: After sequentially growing a GaAS buffer layer(3), an n-GaAs active layer(2) and an n+ GaAs ohmic contact layer(1) on a GaAs substrate(4), the growing layers(3,2,1) are etched by mesa structure. Source and drain electrodes(6,5) are formed on the layers of mesa structure. An insulating layer is deposited on the resultant structure. Dual gate formation regions are defined by selectively etched the insulating layer using a metal mask(19). Then, the exposed n+ GaAs ohmic contact layer(1) and the n-GaAs active layer(2) are recess-etched by using the metal mask(19), thereby forming recess etching regions(21). Dual gate electrodes are formed on the recess etching regions(21). |
