| 摘要 |
PURPOSE: To provide a semiconductor static memory capable of performing stable pre-charge operation and reducing chip area simultaneously and reduced in power consumption at the time of pre-charge operation. CONSTITUTION: A drive current supply circuit 20 having a buffer function is inserted between a word line driver 50 connected to a ward line WL1 and a reference voltage generating circuit 10. In the reference voltage generating circuit 10, reference pre-charge voltage VWD0 is switched at the time of standby or at the time of memory operation. The drive current supply circuit 20 generates per-charge voltage based on the reference pre-charge voltage VWD0. In the word line driver 50, voltage of the word line WL1 is switched to pre- charge voltage VWD or a ground potential. In memory cell 60, an off-leak current for pre-charge operation is switched at the time of standby or at the time of memory operation.
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