| 发明名称 |
PHOTOLITHOGRAPHY METHOD OF SUPER CONDUCTIVE DEVICE |
| 摘要 |
PURPOSE: A photolithography method of a super conductive device is provided to increase the accuracy of pattern formation to manufacturing the device with more accuracy. CONSTITUTION: The super conductive device photolithography method includes a step of vaporizing a metallic reflection layer made of aluminium or gold and has a thickness of 10nm on the surface of a substrate before illuminating a pattern of photo mask on the photoresist(2). And, above step prevents ultra violet layer(5) from penetrating the substrate.
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| 申请公布号 |
KR20010070532(A) |
申请公布日期 |
2001.07.25 |
| 申请号 |
KR20010009785 |
申请日期 |
2001.02.26 |
| 申请人 |
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIEBCE |
发明人 |
KIM, IN SEON;LEE, YONG HO;PARK, YONG GI |
| 分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
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