CMOS INTEGRATED CIRCUIT DEVICE HAVING BURIED SILICON GERMANIUM LAYER

摘要

PURPOSE: A CMOS integrated circuit device is provided, which dose not require the usage of a channel region which is varied to increase the mobility of the channel. CONSTITUTION: The CMOS integrated circuit device includes an electrical dielectric layer(22), a silicon active layer, a gate electrode, and a Si(1-x)Gex layer(16). The silicon active layer, provided on the electrical dielectric layer, is unchanged. The gate electrode is insulated and is provided on the surface of the silicon active layer which is unstrained. The Si(1-x)Gex layer is implemented between the electrical dielectric layer and the silicon active layer which is not strained and forms the first junction between the unstrained silicon active layer. The Si(1-x)Gex layer includes a slant concentration which is decreased linearly in the first direction which extends to the surface from a peak level of the germanium. The peak level further is greater than x="0.15" and the concentration of the germanium in the SI(10x)GEx layer is varied until a level which is smaller than x="0.1" at the first junction.