| 摘要 |
PROBLEM TO BE SOLVED: To provide an ionized cluster beam generation equipment capable of efficiently generating an ionized cluster beam without causing impedance mismatching. SOLUTION: Electric discharge is initiated between a target 10 and an anode 9' which are supported by coaxially provided core-shaped internal and external supporting members 6 and 7, respectively, to produce plasma. Plasma ions are allowed to sputter the boron target 10 to generate neutral boron B and B+, followed by cooling in a growth chamber 3 to form an ionized boron cluster beam. The beam is allowed to pass via a tapered guide face 29 through a converging device 22 in the growth chamber 3 and then implanted in a semiconductor wafer 5.
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