Enhanced faraday cup for diagnostic measurements in an ion implanter

摘要

An apparatus and method are disclosed for profiling the ion beam (IB) in an ion beam implant system. The apparatus includes an insulating substrate (102) that supports at least one charge-collecting zone defined by a conductive material coupled to the insulating substrate; a mechanism for displacing the ion beam relative to the at least one charge-collecting zone (100) for causing an intercept region of an ion implantation beam to impact the at least one charge-collecting zone; and a mechanism (108) for profiling the horizontal and vertical (x and y-coordinate) ion beam intensity distribution for the ion beam.