Method of manufacturing copper interconnect

摘要

A method of manufacturing copper interconnects includes the steps of first providing a semiconductor substrate having a dielectric layer thereon. The dielectric layer further includes a copper layer embedded within. An inter-metal dielectric layer is deposited over the dielectric layer. A via opening and a trench opening that exposes a portion of the copper layer are formed in the inter-metal dielectric layer. A thin barrier layer is formed over the exposed copper layer at the bottom of the via opening. The bottom part of the via opening is bombarded by atoms until the copper layer is exposed. Copper material is deposited to fill the via opening and the trench opening, thereby forming a damascene structure.